BGA7M1N6
Silicon Germanium Low Noise Amplifier for LTE
Data Sheet
Revision 3.1 (Min/Max), 2014-02-11
RF & Protection Devices
Edition 2014-02-11
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BGA7M1N6
Revision History
Page or Item
Subjects (major changes since previous revision)
Revision 3.1 (Min/Max), 2014-02-11
10-15
Min/max values added
Revision 3.0, 2014-02-10
7
Marking added
10-15
Footnotes updated
Trademarks of Infineon Technologies AG
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EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
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thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
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development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANI ZATION FOR STANDARDIZATION. MATLAB™
of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
Data Sheet
3
Revision 3.1 (Min/Max), 2014-02-11
BGA7M1N6
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
1
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2
2.1
2.2
2.3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Measured RF Characteristics Band 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Measured RF Characteristics Band 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Measured RF Characteristics Band 3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
10
12
14
3
3.1
3.2
3.3
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Application Circuit Schematic Band 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Application Circuit Schematic Band 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Application Circuit Schematic Band 3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16
16
17
18
4
Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Data Sheet
4
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BGA7M1N6
List of Figures
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Data Sheet
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Application Schematic BGA7M1N6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Application Schematic BGA7M1N6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Application Schematic BGA7M1N6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Drawing of Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Application Board Cross-Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
TSNP-6-2 Package Outline (top, side and bottom views) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Footprint Recommendation TSNP-6-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Marking Layout (top view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Tape & Reel Dimensions (reel diameter 180 mm, pieces/reel 15000) . . . . . . . . . . . . . . . . . . . . . . 21
5
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BGA7M1N6
List of Tables
List of Tables
Table 1
Table 2
Table 3
Table 4
Table 5
Table 6
Table 7
Table 8
Table 9
Table 10
Table 11
Table 12
Data Sheet
Pin Definition and Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Electrical Characteristics: TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V,
f = 2110 - 2170 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Electrical Characteristics: TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V,
f = 2110 - 2170 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Electrical Characteristics: TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V,
f = 1930 - 1990 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Electrical Characteristics: TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V,
f = 1930 - 1990 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Electrical Characteristics: TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V,
f = 1805 - 1880 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Electrical Characteristics: TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V,
f = 1805 - 1880 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6
Revision 3.1 (Min/Max), 2014-02-11
Silicon Germanium Low Noise Amplifier for LTE
BGA7M1N6
Features
•
•
•
•
•
•
•
•
•
•
•
•
Insertion power gain: 13.0 dB
Low noise figure: 0.60 dB
Low current consumption: 4.4 mA
Operating frequencies: 1805 - 2200 MHz
Supply voltage: 1.5 V to 3.3 V
Digital on/off switch (1V logic high level)
Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
B7HF Silicon Germanium technology
RF output internally matched to 50 Ω
Only 1 external SMD component necessary
2kV HBM ESD protection (including AI-pin)
Pb-free (RoHS compliant) package
VCC PON
AI
AO
ESD
GND
BGA7M1N6_Blockdiagram.vsd
Figure 1
Block Diagram
Product Name
Marking
Package
BGA7M1N6
B
TSNP-6-2
Data Sheet
7
Revision 3.1 (Min/Max), 2014-02-11
BGA7M1N6
Features
Description
The BGA7M1N6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 1805 MHz
to 2200 MHz. The LNA provides 13.0 dB gain and 0.60 dB noise figure at a current consumption of 4.4 mA in the
application configuration described in Chapter 3. The BGA7M1N6 is based upon Infineon Technologies‘ B7HF
Silicon Germanium technology. It operates from 1.5 V to 3.3 V supply voltage.
Pin Definition and Function
Table 1
Pin Definition and Function
Pin No.
Name
Function
1
GND
Ground
2
VCC
DC supply
3
AO
LNA output
4
GND
Ground
5
AI
LNA input
6
PON
Power on control
Data Sheet
8
Revision 3.1 (Min/Max), 2014-02-11
BGA7M1N6
Maximum Ratings
1
Maximum Ratings
Table 2
Maximum Ratings
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note /
Test Condition
Voltage at pin VCC
VCC
-0.3
–
3.6
V
1)
Voltage at pin AI
VAI
-0.3
–
0.9
V
–
Voltage at pin AO
VAO
-0.3
–
VCC + 0.3
V
–
Voltage at pin PON
VPON
-0.3
–
VCC + 0.3
V
–
Voltage at pin GNDRF
VGNDRF
-0.3
–
0.3
V
–
Current into pin VCC
ICC
–
–
16
mA
–
RF input power
PIN
–
–
0
dBm
–
Total power dissipation,
Ptot
–
–
60
mW
–
Junction temperature
TJ
–
–
150
°C
–
Ambient temperature range
TA
-40
–
85
°C
–
Storage temperature range
TSTG
-65
–
150
°C
–
ESD capability all pins
VESD_HBM –
–
2000
V
according to
JESD22A-114
TS < tbd. °C2)
1) All voltages refer to GND-Node unless otherwise noted
2) TS is measured on the ground lead at the soldering point
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Thermal Resistance
Table 3
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
RthJS
tbd.
1) For calculation of RthJA please refer to Application Note Thermal Resistance
K/W
1)
Data Sheet
9
Revision 3.1 (Min/Max), 2014-02-11
BGA7M1N6
Electrical Characteristics
2
Electrical Characteristics
2.1
Measured RF Characteristics Band 1
Table 4
Electrical Characteristics:1) TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V,
f = 2110 - 2170 MHz
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Supply voltage
VCC
1.5
–
3.3
V
–
Supply current
ICC
–
4.4
5.4
mA
ON-mode
–
0.2
3
μA
OFF-mode
1.0
–
Vcc
V
ON-mode
0
–
0.4
V
OFF-mode
–
5
10
μA
ON-mode
–
–
1
μA
OFF-mode
|S21|
11.1
12.6
14.1
dB
–
NF
–
0.65
1.2
dB
ZS = 50 Ω
RLin
7
10
–
dB
–
10
16
–
dB
–
1/|S12|
15
19
–
dB
–
tS
–
4
7
μs
OFF- to ON-mode
Inband input 1dB-compression IP1dB
point3)
-7
-3
–
dBm
–
Inband input 3rd-order intercept IIP3
point6)3)
+2
+7
–
dBm
f1 = 2140 MHz
f2 = f1 +/-10 MHz
Stability5)
–
>1
–
Power On voltage
Vpon
Power On current
Ipon
2
Insertion power gain
Noise figure
2)
Input return loss
3)
3)
Output return loss
Reverse isolation
RLout
3)
2
4)5)
Power gain settling time
1)
2)
3)
4)
5)
6)
k
f = 20 MHz ... 10 GHz
Based on the application described in chapter 3
PCB losses are subtracted
Verification based on AQL; not 100% tested in production
To be within 1 dB of the final gain
Guaranteed by device design; not tested in production
Input power = -30 dBm for each tone
Data Sheet
10
Revision 3.1 (Min/Max), 2014-02-11
BGA7M1N6
Electrical Characteristics
Table 5
Electrical Characteristics:1) TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V,
f = 2110 - 2170 MHz
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Supply voltage
VCC
1.5
–
3.3
V
–
Supply current
ICC
–
4.5
5.5
mA
ON-mode
–
0.2
3
μA
OFF-mode
1.0
–
Vcc
V
ON-mode
0
–
0.4
V
OFF-mode
–
10
15
μA
ON-mode
–
–
1
μA
OFF-mode
|S21|
11.2
12.7
14.2
dB
–
NF
–
0.65
1.2
dB
ZS = 50 Ω
RLin
7
10
–
dB
–
Output return loss
RLout
10
15
–
dB
–
Reverse isolation3)
1/|S12|2
15
19
–
dB
–
tS
–
3
6
μs
OFF- to ON-mode
Inband input 1dB-compression IP1dB
point3)
-4
0
–
dBm
–
Inband input 3rd-order intercept IIP3
point6)3)
+3
+8
–
dBm
f1 = 2140 MHz
f2 = f1 +/-10 MHz
Stability5)
–
>1
–
Power On voltage
Vpon
Power On current
Ipon
2
Insertion power gain
Noise figure
2)
Input return loss
3)
3)
4)5)
Power gain settling time
1)
2)
3)
4)
5)
6)
k
f = 20 MHz ... 10 GHz
Based on the application described in chapter 3
PCB losses are subtracted
Verification based on AQL; not 100% tested in production
To be within 1 dB of the final gain
Guaranteed by device design; not tested in production
Input power = -30 dBm for each tone
Data Sheet
11
Revision 3.1 (Min/Max), 2014-02-11
BGA7M1N6
Electrical Characteristics
2.2
Measured RF Characteristics Band 2
Table 6
Electrical Characteristics:1) TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V,
f = 1930 - 1990 MHz
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Supply voltage
VCC
1.5
–
3.3
V
–
Supply current
ICC
–
4.4
5.4
mA
ON-mode
–
0.2
3
μA
OFF-mode
1.0
–
Vcc
V
ON-mode
0
–
0.4
V
OFF-mode
–
5
10
μA
ON-mode
–
–
1
μA
OFF-mode
|S21|
11.2
12.7
14.2
dB
–
NF
–
0.6
1.2
dB
ZS = 50 Ω
RLin
6
8
–
dB
–
8
11
–
dB
–
1/|S12|
17
21
–
dB
–
tS
–
4
7
μs
OFF- to ON-mode
Inband input 1dB-compression IP1dB
point3)
-7
-3
–
dBm
–
Inband input 3rd-order intercept IIP3
point6)3)
+1
+6
–
dBm
f1 = 1960 MHz
f2 = f1 +/-10 MHz
Stability5)
–
>1
–
Power On voltage
Vpon
Power On current
Ipon
2
Insertion power gain
Noise figure
2)
Input return loss3)
3)
Output return loss
Reverse isolation
RLout
3)
2
4)5)
Power gain settling time
1)
2)
3)
4)
5)
6)
k
f = 20 MHz ... 10 GHz
Based on the application described in chapter 3
PCB losses are subtracted
Verification based on AQL; not 100% tested in production
To be within 1 dB of the final gain
Guaranteed by device design; not tested in production
Input power = -30 dBm for each tone
Data Sheet
12
Revision 3.1 (Min/Max), 2014-02-11
BGA7M1N6
Electrical Characteristics
Table 7
Electrical Characteristics:1) TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V,
f = 1930 - 1990 MHz
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Supply voltage
VCC
1.5
–
3.3
V
–
Supply current
ICC
–
4.5
5.5
mA
ON-mode
–
0.2
3
μA
OFF-mode
1.0
–
Vcc
V
ON-mode
0
–
0.4
V
OFF-mode
–
10
15
μA
ON-mode
–
–
1
μA
OFF-mode
|S21|
11.3
12.8
14.3
dB
–
NF
–
0.6
1.2
dB
ZS = 50 Ω
RLin
6
9
–
dB
–
Output return loss
RLout
8
11
–
dB
–
Reverse isolation3)
1/|S12|2
17
21
–
dB
–
tS
–
3
6
μs
OFF- to ON-mode
Inband input 1dB-compression IP1dB
point3)
-4
0
–
dBm
–
Inband input 3rd-order intercept IIP3
point6)3)
+3
+8
–
dBm
f1 = 1960 MHz
f2 = f1 +/-10 MHz
Stability5)
–
>1
–
Power On voltage
Vpon
Power On current
Ipon
2
Insertion power gain
Noise figure
2)
Input return loss
3)
3)
4)5)
Power gain settling time
1)
2)
3)
4)
5)
6)
k
f = 20 MHz ... 10 GHz
Based on the application described in chapter 3
PCB losses are subtracted
Verification based on AQL; not 100% tested in production
To be within 1 dB of the final gain
Guaranteed by device design; not tested in production
Input power = -30 dBm for each tone
Data Sheet
13
Revision 3.1 (Min/Max), 2014-02-11
BGA7M1N6
Electrical Characteristics
2.3
Measured RF Characteristics Band 3
Table 8
Electrical Characteristics:1) TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V,
f = 1805 - 1880 MHz
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Supply voltage
VCC
1.5
–
3.3
V
–
Supply current
ICC
–
4.4
5.4
mA
ON-mode
–
0.2
3
μA
OFF-mode
1.0
–
Vcc
V
ON-mode
0
–
0.4
V
OFF-mode
–
5
10
μA
ON-mode
–
–
1
μA
OFF-mode
|S21|
11.5
13.0
14.5
dB
–
NF
–
0.65
1.2
dB
ZS = 50 Ω
RLin
6
8
–
dB
–
6
9
–
dB
–
1/|S12|
17
21
–
dB
–
tS
–
4
7
μs
OFF- to ON-mode
Inband input 1dB-compression IP1dB
point3)
-8
-4
–
dBm
–
Inband input 3rd-order intercept IIP3
point6)3)
-1
+4
–
dBm
f1 = 1840 MHz
f2 = f1 +/-10 MHz
Stability5)
–
>1
–
Power On voltage
Vpon
Power On current
Ipon
2
Insertion power gain
Noise figure
2)
Input return loss3)
3)
Output return loss
Reverse isolation
RLout
3)
2
4)5)
Power gain settling time
1)
2)
3)
4)
5)
6)
k
f = 20 MHz ... 10 GHz
Based on the application described in chapter 3
PCB losses are subtracted
Verification based on AQL; not 100% tested in production
To be within 1 dB of the final gain
Guaranteed by device design; not tested in production
Input power = -30 dBm for each tone
Data Sheet
14
Revision 3.1 (Min/Max), 2014-02-11
BGA7M1N6
Electrical Characteristics
Table 9
Electrical Characteristics:1) TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V,
f = 1805 - 1880 MHz
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Supply voltage
VCC
1.5
–
3.3
V
–
Supply current
ICC
–
4.5
5.5
mA
ON-mode
–
0.2
3
μA
OFF-mode
1.0
–
Vcc
V
ON-mode
0
–
0.4
V
OFF-mode
–
10
15
μA
ON-mode
–
–
1
μA
OFF-mode
|S21|
11.6
13.1
14.6
dB
–
NF
–
0.65
1.2
dB
ZS = 50 Ω
RLin
6
8
–
dB
–
Output return loss
RLout
6
9
–
dB
–
Reverse isolation3)
1/|S12|2
17
21
–
dB
–
tS
–
3
6
μs
OFF- to ON-mode
Inband input 1dB-compression IP1dB
point3)
-5
-1
–
dBm
–
Inband input 3rd-order intercept IIP3
point6)3)
+1
+6
–
dBm
f1 = 1840 MHz
f2 = f1 +/-10 MHz
Stability5)
–
>1
–
Power On voltage
Vpon
Power On current
Ipon
2
Insertion power gain
Noise figure
2)
Input return loss
3)
3)
4)5)
Power gain settling time
1)
2)
3)
4)
5)
6)
k
f = 20 MHz ... 10 GHz
Based on the application described in chapter 3
PCB losses are subtracted
Verification based on AQL; not 100% tested in production
To be within 1 dB of the final gain
Guaranteed by device design; not tested in production
Input power = -30 dBm for each tone
Data Sheet
15
Revision 3.1 (Min/Max), 2014-02-11
BGA7M1N6
Application Information
3
Application Information
3.1
Application Circuit Schematic Band 1
N1 BGA7M1N6
GNDRF, 4
RFIN
Band 1
C1
1nF
(optional)
AO, 3
L1
3.9nH
AI, 5
PON
PON, 6
RFOUT
Band 1
VCC
VCC, 2
C2
1nF
(optional)
GND, 1
BGA7M1N6_B1_Schematic.vsd
Figure 2
Application Schematic BGA7M1N6
Table 10
Bill of Materials
Name
Part Type
Package
Manufacturer
Function
C1 (optional)
Chip capacitor
0402
Various
DC block 1)
C2 (optional)
≥ 1nF2)
0402
Various
RF bypass 3)
L1
Chip inductor
0402
Murata LQW type
Input matching
N1
BGA7M1N6
TSNP-6-2
Infineon
SiGe LNA
1) DC block might be realized with pre-filter in LTE applications
2) For data sheet characteristics 1nF used
3) RF bypass recommended to mitigate power supply noise
A list of all application notes is available at http://www.infineon.com/gpslna.appnotes.
Data Sheet
16
Revision 3.1 (Min/Max), 2014-02-11
BGA7M1N6
Application Information
3.2
Application Circuit Schematic Band 2
N1 BGA7M1N6
GNDRF, 4
RFIN
Band 2
C1
1nF
(optional)
AO, 3
L1
5.1nH
AI, 5
PON
PON, 6
RFOUT
Band 2
VCC
VCC, 2
C2
1nF
(optional)
GND, 1
BGA7M1N6_B2_Schematic.vsd
Figure 3
Application Schematic BGA7M1N6
Table 11
Bill of Materials
Name
Part Type
Package
Manufacturer
Function
C1 (optional)
Chip capacitor
0402
Various
DC block 1)
C2 (optional)
≥ 1nF2)
0402
Various
RF bypass 3)
L1
Chip inductor
0402
Murata LQW type
Input matching
N1
BGA7M1N6
TSNP-6-2
Infineon
SiGe LNA
1) DC block might be realized with pre-filter in LTE applications
2) For data sheet characteristics 1nF used
3) RF bypass recommended to mitigate power supply noise
A list of all application notes is available at http://www.infineon.com/gpslna.appnotes.
Data Sheet
17
Revision 3.1 (Min/Max), 2014-02-11
BGA7M1N6
Application Information
3.3
Application Circuit Schematic Band 3
N1 BGA7M1N6
GNDRF, 4
RFIN
Band 3
C1
1nF
(optional)
AO, 3
L1
5.6nH
AI, 5
PON
PON, 6
RFOUT
Band 3
VCC
VCC, 2
C2
1nF
(optional)
GND, 1
BGA7M1N6_B3_Schematic.vsd
Figure 4
Application Schematic BGA7M1N6
Table 12
Bill of Materials
Name
Part Type
Package
Manufacturer
Function
C1 (optional)
Chip capacitor
0402
Various
DC block 1)
C2 (optional)
≥ 1nF2)
0402
Various
RF bypass 3)
L1
Chip inductor
0402
Murata LQW type
Input matching
N1
BGA7M1N6
TSNP-6-2
Infineon
SiGe LNA
1) DC block might be realized with pre-filter in LTE applications
2) For data sheet characteristics 1nF used
3) RF bypass recommended to mitigate power supply noise
A list of all application notes is available at http://www.infineon.com/gpslna.appnotes.
Data Sheet
18
Revision 3.1 (Min/Max), 2014-02-11
BGA7M1N6
Application Information
BGA7x1N6_Application_Board.vsd
Figure 5
Drawing of Application Board
Vias
Vias
Ro4003, 0.2mm
Copper
35µm
FR4,0.8mm
BGA7x1N6_application _board _sideview.vsd
Figure 6
Data Sheet
Application Board Cross-Section
19
Revision 3.1 (Min/Max), 2014-02-11
BGA7M1N6
Package Information
Package Information
Bottom view
+0.025
0.375 -0.015
0.7 ±0.05
0.02 MAX.
0.2
±0.05 1)
0.8 ±0.05
3
4
2
5
1
6
0.4 ±0.05
Pin 1 marking
1) Dimension applies to plated terminals
Figure 7
1.1 ±0.05
Top view
0.2 ±0.05 1)
4
TSNP-6-2-PO V01
TSNP-6-2 Package Outline (top, side and bottom views)
NSMD
0.4
0.4
0.25
0.25
0.4
0.4
0.25
0.25
(stencil thickness 100 µm)
Copper
Stencil apertures
Solder mask
TSNP-6-2-FP V01
Figure 8
Footprint Recommendation TSNP-6-2
1
Type code
Monthly data code
Pin 1 marking
TSNP-6-2-MK V01
Figure 9
Data Sheet
Marking Layout (top view)
20
Revision 3.1 (Min/Max), 2014-02-11
BGA7M1N6
Package Information
1.25
Pin 1
marking
8
0.5
2
0.85
TSNP-6-2-TP V01
Figure 10
Data Sheet
Tape & Reel Dimensions (reel diameter 180 mm, pieces/reel 15000)
21
Revision 3.1 (Min/Max), 2014-02-11
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